Thermal Characterization of In-Sb-Te thin films for phase change memory application

The aim of the present work is to measure the thermal conductivity of In-Sb-Te alloy (IST) with a varying quantity of Te. The material is deposited as a thin film using the Metal-Organic Chemical Vapour Deposition (MOCVD) technique. Changing slightly the deposition parameters leads to achieve the Te variation within the alloy. We measured also the thermal boundary resistances at the interfaces between the IST layer with dielectric (SiO2, Al2O3) and metallic (Pt) layers. The measurement of the thermal conductivity and TBR is performed in a broad temperature range from room temperature (RT) up to 550°C in order to have the phase change occurring at the expected temperature and to obverse related variations of the measured quantities.