The structural and chemical properties of Ge-Sb-Te and Si nanowires have been studied by means of Transmission Electron Microscopy techniques. A methodological research has been dedicated to the development of methods, based on the comparison of experimental images with their accurate simulations, to extract quantitative chemical information directly from the image contrast.
Advanced analytical transmission electron microscopy methodologies for the study of the chemical and physical properties of semiconducting nanostructures
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2014
Abstract
The structural and chemical properties of Ge-Sb-Te and Si nanowires have been studied by means of Transmission Electron Microscopy techniques. A methodological research has been dedicated to the development of methods, based on the comparison of experimental images with their accurate simulations, to extract quantitative chemical information directly from the image contrast.File in questo prodotto:
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.14242/273403
Il codice NBN di questa tesi è
URN:NBN:IT:UNIPR-273403