In this work were studied the recombination dynamics of electron hole pairs in Zinc Oxide bulk crystal and nanowires using time resolved, time integrated and excitation resolved photoluminescence measurements. In particular are shown some experimental results regarding possible gas sensing applications of ZnO nanowires and some optical properties of this material confirming it as promising material for optoelectronics. Also a characterization of ZnO bulk crystal is performed, in particular the study of high injection effects is described. Moreover are explained some models showing that is possible to use time resolved photoluminescence measurements (TRPL) to obtain information on semiconductor materials, then these models are tested on ZnO bulk crystal.

Recombination dynamics in zinc oxide

2010

Abstract

In this work were studied the recombination dynamics of electron hole pairs in Zinc Oxide bulk crystal and nanowires using time resolved, time integrated and excitation resolved photoluminescence measurements. In particular are shown some experimental results regarding possible gas sensing applications of ZnO nanowires and some optical properties of this material confirming it as promising material for optoelectronics. Also a characterization of ZnO bulk crystal is performed, in particular the study of high injection effects is described. Moreover are explained some models showing that is possible to use time resolved photoluminescence measurements (TRPL) to obtain information on semiconductor materials, then these models are tested on ZnO bulk crystal.
2010
it
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14242/326855
Il codice NBN di questa tesi è URN:NBN:IT:BNCF-326855