In the present work it is mentioned the limits to mechanical, thermal and electrical properties of silicon at high temperatures, in order to overcome the new technological challenges in the realization of devices for novel applications, research and development of new materials are needed. Diamond and in particular polycrystalline diamond, produced with CVD (Chemical Vapor Deposition) technique, is without any doubt an outstanding material in its mechanical, optical, thermal and electronic properties. In this context is placed the present PhD thesis, that has been organized in seven chapters. The present work it’s centered on the study of diamond doping and piezoresistive effect on boron doped p-type diamond grown at the Mechanical Engineering Department of the University of Rome “Tor Vergata” laboratories. This work also presents a study of the mentioned effect at high temperature in order to establish some parameters that must be taken into account for the realization of potential strain gauge apt to be used at high temperature. Bibliography and conclusions are also presented in order to explain the theoretical aspects that underlies piezoresistive effect theory.
Nel presente lavoro di tesi si fa menzione dei limiti meccanici, termici ed elettronici delle propietá del silicio ad alte temperature, perció dei nuovi materiale devono essere sviluppati; un materiale che presenta delle ottime propietá meccaniche, ottiche, termiche ede elettroniche è il diamante e in particulare il diamante policristalino ottenuto tramite CVD (Chemical Vapour Deposition). In questo scenario s’è sviluppato il presente lavoro di tesi che ha come organizzazione tematica sette capitoli. Il lavoro se centra nello studio d’il drogaggio d’il diamante e dell’effetto piezoresistivo nei films di diamante CVD cresciuti e drogati al boro preso i laboratori d’il Dipartimento d’Ingegneria Meccanica dell’Università di Roma “Tor Vergata”. Nello stesso lavoro si presentano degli studi sul predetto effetto ad alte temperature con lo scopo di stabilire dei parametri fisici che devono essere controllati per la realizzazione d’un sensore di deformazione al diamante adatto ad essere utilizatto ad alte temperature. Si presentano pure delle conclusione e delle resegne bibliografiche per una migliore comprensione degli aspecti teorici sottostanti all’effetto piezoresistivo.
Characterization of piezoresistive properties in CVD diamond films to be used as strain gauge
Gonzalo, Rodríguez
2005
Abstract
In the present work it is mentioned the limits to mechanical, thermal and electrical properties of silicon at high temperatures, in order to overcome the new technological challenges in the realization of devices for novel applications, research and development of new materials are needed. Diamond and in particular polycrystalline diamond, produced with CVD (Chemical Vapor Deposition) technique, is without any doubt an outstanding material in its mechanical, optical, thermal and electronic properties. In this context is placed the present PhD thesis, that has been organized in seven chapters. The present work it’s centered on the study of diamond doping and piezoresistive effect on boron doped p-type diamond grown at the Mechanical Engineering Department of the University of Rome “Tor Vergata” laboratories. This work also presents a study of the mentioned effect at high temperature in order to establish some parameters that must be taken into account for the realization of potential strain gauge apt to be used at high temperature. Bibliography and conclusions are also presented in order to explain the theoretical aspects that underlies piezoresistive effect theory.File | Dimensione | Formato | |
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https://hdl.handle.net/20.500.14242/199981
URN:NBN:IT:UNIROMA2-199981